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| Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER General Description High voltage dual schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. The MBR30100C is available in standard TO-220-3, TO-220-3(2) and TO-220F-3 packages. MBR30100C Main Product Characteristics IF(AV) VRRM TJ VF(max) 2*15A 100V 150C 0.75V Mechanical Characteristics Features * * * * * High Surge Capacity 150C Operating Junction Temperature 30A Total (15 A Per Diode Leg) Guard-Ring foe Stress Protection Pb- Free Packages are available * * * * * * Case: Epoxy, Molded Epoxy Meets UL 94 V-0@ 0.125 in Weight (Approximately): 1.9 Grams (TO-220-3, TO-220-3(2) TO-220F-3) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds and Applications * * * Power Supply - Output Rectification Power Management Instrumentation TO-220F-3 TO-220-3 TO-220-3 (2) Figure 1. Package Type of MBR30100C Apr. 2009 Rev. 1.1 1 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Pin Configuration T Package (TO-220-3) (TO-220-3(2)) MBR30100C 3 2 1 A2 K A1 TF Package (TO-220F-3) Figure 2. Pin Configuration of MBR30100C (Top View) Figure 3. Internal Structure of MBR30100C Apr. 2009 Rev. 1.1 2 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Ordering Information MBR30100C - MBR30100C Circuit Type Package T: TO-220-3/TO-220-3(2) TF: TO-220F-3 E1: Lead Free G1: Green Blank: Tube Package TO-220-3/ TO-220-3(2) TO-220F-3 Part Number Lead Free MBR30100CTE1 MBR30100CTF -E1 Marking ID Lead Free MBR30100CTE1 MBR30100CTF -E1 Green MBR30100CTG1 MBR30100CTF -G1 Green MBR30100CTG1 MBR30100CTF G1 Packing Type Tube Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Absolute Maximum Ratings ( Per Diode Leg) (Note 1) Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 126C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 126C Non repetitive Peak Surge Current (Surge applied at rated load conditions half wave, single phase, 60Hz) Operating Junction Temperature RangeNote 2 Storage Temperature Range Voltage Rate of Change (Rated VR) ESD Ratings: Machine Model = C Human Body Model =3B Symbol VRRM VRWM VR IF(AV) IFRM IFSM TJ TSTG dv/dt Value 100 15 30 200 150 -55 to 150 10000 > 400 > 8000 Unit V A A A C C V/s V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/JA. Apr. 2009 Rev. 1.1 3 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Recommended Operating Conditions Parameter Symbol JC Maximum Thermal Resistance JA Junction to Ambient MBR30100C Condition Junction to Case Value TO-220-3/ TO-220-3(2) TO-220F-3 TO-220-3/ TO-220-3(2) TO-220F-3 2.5 4.5 60 60 Unit C/W Electrical Characteristics Parameter Maximum Instantaneous Forward Voltage Drop (Note 3) Symbol Conditions IF=15A, TC=25C IF=15A, TC=125C IF=30 A, TC=25C IF=30A, TC=125C Value 0.85 0.75 0.95 0.85 6.0 Units VF V Maximum Instantaneous Reverse Current (Note 3) IR Rated DC TC=125C Rated DC TC=25C Voltage, Voltage, mA 0.1 Note 3: Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. Apr. 2009 Rev. 1.1 4 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Typical Performance Characteristics MBR30100C 100 10000 TJ=150C Instantaneous Forward Current (A) 1000 10 Reverse Current (A) TJ=150C 1 100 TJ=125C TJ=125C 10 1 0.1 TJ=25C 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 TJ=25C 0 20 40 60 80 100 0.01 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 4. Typical Forward Voltage Per Diode Figure 5. Typical Reverse Current Per Diode 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 100 105 110 115 120 125 130 135 140 145 150 155 Average Forward Current (A) Case Temperature (C) Figure 6. Average Forward Current vs. Case Temperature (Square, Per Diode) Apr. 2009 Rev. 1.1 5 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Mechanical Dimensions TO-220-3 9.660(0.380) 10.660(0.420) 3.560(0.140) 4.060(0.160) 2.580(0.102) 3.380(0.133) MBR30100C Unit: mm(inch) 0.550(0.022) 1.350(0.053) 0.200(0.008) 7 1.500(0.059) 3.560(0.140) 4.820(0.190) 2.080(0.082) 2.880(0.113) 3 7 1.160(0.046) 1.760(0.069) 0.381(0.015) 60 0.813(0.032) 8.763(0.345) 60 0.381(0.015) 2.540(0.100) 2.540(0.100) 0.356(0.014) 0.406(0.016) Apr. 2009 Rev. 1.1 6 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Mechanical Dimensions TO-220-3(2) Unit: mm(inch) MBR30100C 9.800(0.386) 10.200(0.402) 1.700(0.067) 3.560(0.140) 3.640(0.143) 0.600(0.024) 1.300(0.051) 1.300(0.051) 3 4.500(0.177) 2.400(0.094) 3 3 1.270(0.050) 0.700(0.028) 0.900(0.035) 2.540(0.100) 2.540(0.100) 0.400(0.016) 0.600(0.024) Apr. 2009 Rev. 1.1 7 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Mechanical Dimensions (Continued) TO-220F-3 9.700(0.382) 10.300(0.406) 3.000(0.119) 3.550(0.140) 6.900(0.272) 7.100(0.280) MBR30100C Unit: mm(inch) 3.000(0.119) 3.400(0.134) 2.350(0.093) 2.900(0.114) 3.370(0.133) 3.900(0.154) 14.700(0.579) 16.000(0.630) 4.300(0.169) 4.900(0.075) 2.790(0.110) 4.500(0.177) 12.500(0.492) 13.500(0.531) 0.550(0.022) 0.900(0.035) 2.540(0.100) 1.000(0.039) 1.400(0.055) 1.100(0.043) 1.500(0.059) 2.540(0.100) 0.450(0.018) 0.600(0.024) Apr. 2009 Rev. 1.1 8 BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifiBCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. other rights nor the rights of others. MAIN SITE MAIN SITE - Headquarters BCD Semiconductor Manufacturing Limited - Wafer Fab BCD Semiconductor Manufacturing Limited Shanghai Design Group - IC SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 900, Yi Shan Road, Shanghai 200233, China 8F, Zone B, 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 USA Office BCD Semiconductor Corp. USA Office 30920 Huntwood Ave. Hayward, BCD Semiconductor Corporation CA 94544, USA 30920 Huntwood Ave. Hayward, Tel 94544, U.S.A CA : +1-510-324-2988 Fax: +1-510-324-2788 Tel : +1-510-324-2988 Fax: +1-510-324-2788 REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Limited Tel: +86-21-24162266, Fax: +86-21-24162277 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Taiwan Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Office (Taiwan) Company Limited Semiconductor Shenzhen Office Room E, SIM-BCD Semiconductor 3rd Fuzhong Road, Futian District, Shenzhen, 4F, 298-1, Rui Guang Road,(Taiwan) Company Limited Shanghai 5F, Noble Center, No.1006,Manufacturing Co., Ltd. Shenzhen Office BCD Semiconductor Nei-Hu District, Taipei, 518026, China Taiwan 298-1, Rui Guang Road, Nei-Hu District, Taipei, Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, Tel: +86-755-8826 Center, Tel: Taiwan Room E, 5F, Noble 7951 No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China +886-2-2656 2808 Fax:+86-755-8826 7951 +86-755-8826 7865 Fax: +886-2-2656 28062808 Tel: Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 |
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